| 应用 | InSb is a III-V semiconductor and has a very narrow band gap (170 meV) and high electron mobilitiy, making it a material of interest for high-speed electronics, photovoltaic applications, IR detecting devices, thermoelectrics, and magnetoresistive sensors. |
| 别名 | 一锑化铟; |
锑化铟
Indium antimonide （订货以英文为准）
编号：I119263
CAS号：1312-41-0
分子式：INSB
分子量：236.58
| 产品名称 | Indium antimonide |
| 中文名称 | 锑化铟 |
| CAS号 | 1312-41-0 |
| 分子式（M.F.） | INSB |
| 分子量（M.W.） | 236.58 |
| 储存条件 | 室温 |
| 标识符号 | https://www.aladdin-e.com/images/ghs/ghs07.jpg |
| 信号词 | Warning |
| 危害声明 | H319,H335 |
| 警示性声明 | P261,P280,P305+P351+P338,P304+P340,P405,P501A |
| 风险声明 (欧洲) | R36/37 |
| 安全声明（欧洲） | S26 |
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